SOI Wafer Silicon On Insulator Mass Semiconductor
- $10.00 / 1 - 4 pieces
$2.00 / >=5 pieces - 1 piece
- Shanghai Xinkehui New Material Co., Ltd.
- Shanghai, China
- Mr ri
PRODUCT DETAIL
| brand: | Xinkehui | Dopant: | Boron / Phosphorus / Antimony / Arsenic |
| Conductivity: | P-Type/N-Type/Intrinsic | method: | welding |
| direction: | 100/111/110 or other | place of origin; place of origin: | Shanghai |
| diameter: | 2/3/4/6/8/12 inches | Device Thickness: | 2-300 microns |
| payment terms: | L/C,Western Union,D/P,D/A,T/T,MoneyGram | type: | SIO wafer |
| Resistivity: | 0.001-100000 ohm-cm | Packaging Preview: | |
| Packaging Details: | single wafer cassette | port: | Shanghai |
| Handling wafers: | Handling wafers | Oxide Thickness: | 500A-4 microns |
| tolerant: | +/-0.5um-2um | model: | silicon wafer |
| Supply capacity: | 5000 pieces/year |
Product Description
SOI wafer (silicon on insulator)
* SOI wafer sizes from 3 inches to 200 mm, some are in stock
* Very high quality with tight TTV on device layer thickness
* Available in direct Si-Si bonding and double-sided SOI
* Any Si orientation, any device thickness above 1.5um
*Single and double polished
*Available for small batch and wafer laser marking
* Short delivery time
* Very high quality with tight TTV on device layer thickness
* Available in direct Si-Si bonding and double-sided SOI
* Any Si orientation, any device thickness above 1.5um
*Single and double polished
*Available for small batch and wafer laser marking
* Short delivery time
Types of SOI Wafers
Customizability is our main cornerstone and we always try our best to meet all your needs. in that essence
We offer the following types of SOI wafers:
Thick SOI Wafer
This type of wafer has device thicknesses from 1µm to 300µm.
Ultra-thin SOI wafer
The device thickness of this wafer is <500nm.
Ultra-Uniform SOI Wafer
Device thickness uniformity can be as low as ±0.5µm for thick SOI and as low as ±10nm for ultrathin SOI.
Ultra Flat SOI Wafer
For certain applications, this type of SOI has very low BOW/WARP/TTV.
We offer the following types of SOI wafers:
Thick SOI Wafer
This type of wafer has device thicknesses from 1µm to 300µm.
Ultra-thin SOI wafer
The device thickness of this wafer is <500nm.
Ultra-Uniform SOI Wafer
Device thickness uniformity can be as low as ±0.5µm for thick SOI and as low as ±10nm for ultrathin SOI.
Ultra Flat SOI Wafer
For certain applications, this type of SOI has very low BOW/WARP/TTV.
Specification
thing | value |
place of origin; place of origin | Shanghai |
brand | Xinkehui |
model | silicon wafer |
type | SIO wafer |
method | welding |
diameter | 2/3/4/6/8/12 inches |
Device thickness | 2-300 microns |
tolerant | +/-0.5um-2um |
direction | 100/111/110 or other |
Conductivity | P-Type/N-Type/Intrinsic |
Resistivity | 0.001-100000 ohm-cm |
dopant | Boron / Phosphorus / Antimony / Arsenic |
oxide thickness | 500A-4 microns |
Handling wafers | Handling wafers |
SOI wafers are highly customizable and the parameters are very flexible according to your needs.
SOI Wafer Applications
High Speed IC High Temperature IC Low Power IC Low Voltage IC Microwave Components Power Devices MEMS Semiconductors
High Speed IC High Temperature IC Low Power IC Low Voltage IC Microwave Components Power Devices MEMS Semiconductors
VIEW MORE
YOU MAY LIKE
